Substrate-polarity dependence of metal-organic vapor-phase epitaxy-grown GaN on SiC
- 1 November 1988
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 64 (9) , 4531-4535
- https://doi.org/10.1063/1.341281
Abstract
Single‐crystal gallium nitride was grown on each of the two polar {0001} planes of 6H‐silicon carbide substrates utilizing metal‐organic vapor‐phase epitaxy. The substrate polarity is clearly shown to strongly influence the surface morphology and the photoluminescence property of the layer. The examination of the layer surfaces using x‐ray photoelectron spectroscopy revealed that {0001} GaN grown on the basal planes of SiC changes its polarity in accordance with the substrate polarity.This publication has 27 references indexed in Scilit:
- GaN electroluminescent devices: Preparation and studiesJournal of Luminescence, 1978
- Optical Properties of GaN Light Emitting DiodesJournal of the Electrochemical Society, 1976
- Epitaxial growth and piezoelectric properties of A1N, GaN, and GaAs on sapphire or spinelJournal of Electronic Materials, 1973
- Vapor Phase Epitaxial Growth of GaN on GaAs, GaP, Si, and Sapphire Substrates from GaBr[sub 3] and NH[sub 3]Journal of the Electrochemical Society, 1973
- Absorption, Reflectance, and Luminescence of GaN Epitaxial LayersPhysical Review B, 1971
- Stimulated Emission and Laser Action in Gallium NitrideApplied Physics Letters, 1971
- The Use of Metalorganics in the Preparation of Semiconductor MaterialsJournal of the Electrochemical Society, 1971
- Gallium Nitride FilmsJournal of the Electrochemical Society, 1971
- THE PREPARATION AND PROPERTIES OF VAPOR-DEPOSITED SINGLE-CRYSTAL-LINE GaNApplied Physics Letters, 1969
- Preparation and Structural Properties of GaN Thin FilmsJournal of Vacuum Science and Technology, 1969