Rutherford backscattering study of crystal orientation dependent annealing effects in high-dose antimony implanted silicon
- 1 January 1978
- journal article
- Published by Springer Nature in Applied Physics B Laser and Optics
- Vol. 15 (1) , 73-78
- https://doi.org/10.1007/bf00896893
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- ION IMPLANTATION OF SILICON: II. ELECTRICAL EVALUATION USING HALL-EFFECT MEASUREMENTSCanadian Journal of Physics, 1967
- Zur Einfach- und Mehrfachstreuung geladener TeilchenZeitschrift für Naturforschung A, 1960
- Solid Solubilities of Impurity Elements in Germanium and Silicon*Bell System Technical Journal, 1960