Radiation-induced interface state generation in MOS devices with reoxidised nitrided SiO 2 gate dielectrics
- 28 September 1989
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 25 (20) , 1403-1405
- https://doi.org/10.1049/el:19890939
Abstract
In this letter, the radiation-induced interface state generation ADh in MOS devices with reoxidised nitrided gate oxides has been studied. The reoxidised nitrided oxides were fabricated by rapid thermal reoxidation (RTO) of rapidly thermal nitrided (RTN) SiO2. The devices were irradiated by exposure to X-rays at doses of 0.5–5.0 Mrad (Si). It is found that the RTO process improves the radiation hardness of RTN oxides in terms of interface state generation. The enhanced interface ‘hardness’ of reoxidised nitrided oxides is attributed to the strainless interfacial oxide regrowth or reduction of hydrogen concentration during RTO of RTN oxides.Keywords
This publication has 1 reference indexed in Scilit:
- Electrical properties of nitrided-oxide systems for use in gate dielectrics and EEPROMPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1983