Electrical effects of SiN x depositionon GaNMESFETs
- 12 April 2001
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 37 (8) , 527-528
- https://doi.org/10.1049/el:20010324
Abstract
The electrical effects of SiNx deposition on GaN MESFETs have been investigated. Significant effects induced from the dielectric coating have been observed depending on the temperature deposition used in the technological process. A power density increase of 30% has been observed after the device passivation performed at 200°C.Keywords
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