High-power GaN MESFET on sapphire substrate

This publication has 4 references indexed in Scilit:

• 3-watt AlGaN-GaN HEMTs on sapphire substrates with thermal management by flip-chip bonding
  Published by Institute of Electrical and Electronics Engineers (IEEE) ,2002
• Trap effects studies in GaN MESFETs by pulsed measurements
  Electronics Letters, 1999
• GaN based transistors for high power applications
  Solid-State Electronics, 1998
• High-power 10-GHz operation of AlGaN HFET's on insulating SiC
  IEEE Electron Device Letters, 1998