3-watt AlGaN-GaN HEMTs on sapphire substrates with thermal management by flip-chip bonding

This publication has 2 references indexed in Scilit:

• High performance and large area flip-chip bonded AlGaN/GaN MODFETs
  Published by Institute of Electrical and Electronics Engineers (IEEE) ,2002
• Short-channel Al _0.5 Ga _0.5 N/GaNMODFETs withpower density > 3 W/mm at 18 GHz
  Electronics Letters, 1997