High performance and large area flip-chip bonded AlGaN/GaN MODFETs
- 23 November 2002
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. 18, 569-572
- https://doi.org/10.1109/iedm.1997.650450
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Recent advances in III-V nitride electron devicesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Short channel AlGaN/GaN MODFET's with 50-GHz f/sub T/ and 1.7-W/mm output-power at 10 GHzIEEE Electron Device Letters, 1997
- Microwave performance of AlGaN/GaN inverted MODFET'sIEEE Electron Device Letters, 1997
- Thermal design of gallium arsenide MESFETs for microwave power amplifiersIEE Proceedings - Circuits, Devices and Systems, 1997