High-mobility CdTe films grown by molecular beam epitaxy with excess Cd
- 22 October 1990
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 57 (17) , 1754-1756
- https://doi.org/10.1063/1.104057
Abstract
We report the fact that n‐type conducting CdTe can be grown by molecular beam epitaxy (MBE) with excess Cd flux and show for the first time details of the CdTe/Cd surface phase reconstruction diagram.The surface phase diagram has been mapped over the substrate temperature range 180–375 °C using Cd/CdTe ratios between 0.0 and 1.0. At low Cd/CdTe ratios and high temperatures a (2×1) reconstruction is observed and at high Cd/CdTe flux ratios we observe a c(2×2) reconstruction. We have also observed a strong influence of substrate illumination on the surface reconstruction.Keywords
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