Very high mobility HgTe films grown on GaAs substrates by molecular-beam epitaxy
- 15 April 1988
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 63 (8) , 2872-2874
- https://doi.org/10.1063/1.340944
Abstract
HgTe films have been grown in both the (100) and (111) orientations on (100) GaAs. In agreement with what has been reported for growth on II‐VI substrates, we find higher Hall mobilities in (100) films. An 80‐K mobility of 92 200 cm2 V−1 s−1 has been achieved. This is higher than has previously been reported for growth on (100) II‐VI substrates. The conditions for growing these films are described.This publication has 12 references indexed in Scilit:
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