Resonant tunneling through a HgTe/Hg1−xCdxTe double barrier, single quantum well heterostructure
- 10 November 1986
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 49 (19) , 1293-1295
- https://doi.org/10.1063/1.97390
Abstract
Resonant tunneling has been demonstrated through a double barrier, single quantum well HgTe/Hg1−xCdxTe heterostructure for the first time. Negative differential resistance is observable at room temperature, exhibiting a 1.4:1 peak to valley tunnel current ratio. The observation provides direct evidence for the existence of the proposed intrinsic interface state.Keywords
This publication has 14 references indexed in Scilit:
- Excited state resonant tunneling in GaAsAlxGa1−xAs double barrier heterostructuresSuperlattices and Microstructures, 1986
- Resonant tunneling through a double GaAs/AlAs superlattice barrier, single quantum well heterostructureApplied Physics Letters, 1986
- Dependence of resonant tunneling current on well widths in AlAs/GaAs/AlAs double barrier diode structuresApplied Physics Letters, 1986
- Growth of HgCdTe and other Hg-based films and multilayers by molecular beam epitaxyJournal of Vacuum Science & Technology A, 1986
- Sequential resonant tunneling through a multiquantum well superlatticeApplied Physics Letters, 1986
- Resonant tunneling of holes in AlAs-GaAs-AlAs heterostructuresApplied Physics Letters, 1985
- Resonant tunneling oscillations in a GaAs-AlxGa1−xAs heterostructure at room temperatureApplied Physics Letters, 1985
- Resonant tunneling through quantum wells at frequencies up to 2.5 THzApplied Physics Letters, 1983
- CdTe-HgTe multilayers grown by molecular beam epitaxyApplied Physics Letters, 1982
- Resonant tunneling in semiconductor double barriersApplied Physics Letters, 1974