Diffusion of electrons and holes in semiconductors under conditions of gradients of lattice temperature and carrier concentration
- 28 February 1981
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 14 (6) , 881-889
- https://doi.org/10.1088/0022-3719/14/6/013
Abstract
The diffusion of carriers in Si is shown to be drastically modified by band bending induced by gradients of carrier temperature and lattice temperature. The effect is studied at low and high temperatures, and consequences about the mechanisms of transfer of energy from the energy source (the laser) to the solid are discussed.Keywords
This publication has 17 references indexed in Scilit:
- Raman Measurement of Lattice Temperature during Pulsed Laser Heating of SiliconPhysical Review Letters, 1980
- Experimental test of the non-thermal theory of laser annealing using silicon on sapphirePhysics Letters A, 1980
- Energy-gap narrowing and state filling in semiconductors under intense laser irradiationPhysical Review B, 1978
- Theory of electron-hole liquid in semiconductorsPhysical Review B, 1978
- The effect of electron interaction on the band gap of extrinsic semiconductorsJournal of Physics C: Solid State Physics, 1976
- Effect of electron-hole pairs on phonon frequencies in Si related to temperature dependence of band gapsPhysical Review B, 1976
- Theory of the isotope shift for zero-phonon optical transitions at traps in semiconductorsPhysical Review B, 1975
- Picosecond Ellipsometry of Transient Electron-Hole Plasmas in GermaniumPhysical Review Letters, 1974
- Electron-Hole Liquids in SemiconductorsPhysical Review B, 1973
- Explicit local exchange-correlation potentialsJournal of Physics C: Solid State Physics, 1971