Epitaxial thin films of ZnS and GaAs prepared by R.F. sputtering on NaCl substrates
- 1 April 1972
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 10 (1) , 11-20
- https://doi.org/10.1016/0040-6090(72)90267-2
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Review of optical and electrical properties of amorphous semiconductorsJournal of Non-Crystalline Solids, 1970
- Epitaxial growth of films of ZnS evaporated on to NaClJournal of Physics D: Applied Physics, 1969
- Epitaxy of GaAs on vacuum-cleaved rocksaltJournal of Crystal Growth, 1968
- Growth and perfection of chemically-deposited epitaxial layers of Si and GaAsJournal of Crystal Growth, 1968
- Epitaxial growth of cubic ZnS by evaporation in ultra-high vacuumJournal of Physics D: Applied Physics, 1968
- A small scale ratio frequency sputtering apparatusThin Solid Films, 1967
- Theory and practice of RF sputteringVacuum, 1967
- Effect of gaseous environment on the structure of sputtered GaAs films on NaCl substratesPhilosophical Magazine, 1966
- Dielectric Thin Films through rf SputteringJournal of Applied Physics, 1966