Growth and perfection of chemically-deposited epitaxial layers of Si and GaAs
- 1 January 1968
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 3-4, 43-59
- https://doi.org/10.1016/0022-0248(68)90100-0
Abstract
No abstract availableThis publication has 56 references indexed in Scilit:
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