A NEW MECHANISM FOR STACKING FAULT GENERATION IN EPITAXIAL GROWTH OF SILICON IN ULTRA-HIGH VACUUM
- 15 August 1967
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 11 (4) , 134-136
- https://doi.org/10.1063/1.1755065
Abstract
The homo‐epitaxial growth of thick films of silicon, grown by sublimation in vacuo of about 10‐10 torr, has been investigated by means of low‐energy electron diffraction (LEED) and transmission electron microscopy. In films grown on (111), stacking faults appear at substrate temperatures below 600°C, and increase in density with further decrease in growth temperature. Their appearance is correlated with the development of a mixed Si(111)‐5, Si(111)‐7 surface structure in this temperature range. It is proposed that these faults are generated by a new mechanism, whereby their nucleation is attributed to the formation of Si(111)‐5 domains on the initial Si(111)‐7 substrate surface.Keywords
This publication has 4 references indexed in Scilit:
- A LEED STUDY OF THE HOMOEPITAXIAL GROWTH OF THICK SILICON FILMSApplied Physics Letters, 1967
- Growth of epitaxial silicon layers by vacuum evaporationPhilosophical Magazine, 1965
- EPITAXIAL GROWTH OF Si ON Si IN ULTRA HIGH VACUUMApplied Physics Letters, 1964
- Crystallographic Imperfections in Epitaxially Grown SiliconJournal of Applied Physics, 1962