Auger analysis of ultrathin SiO2 layers on silicon
- 1 February 1979
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 50 (2) , 874-880
- https://doi.org/10.1063/1.326003
Abstract
The Auger LVV lines of ultrathin SiO2 layers thermally grown on Si are analyzed by comparing the measured lines with lines synthesized from standard SiO2 and Si lines. The synthesized lines were corrected for ion and electron beam effects and charging. The synthesis technique provides quantitative interpretation of the Auger lines in the interfacial region. An apparent thickness‐dependent transition region is observed which can be explained as either a graded SiO2‐Si region or as an abrupt SiO2‐Si transition with a nonuniformly thick oxide. The latter is the more probable.This publication has 20 references indexed in Scilit:
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