Oxidation of Si surfaces
- 1 September 1975
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 46 (9) , 3885-3887
- https://doi.org/10.1063/1.322133
Abstract
The oxide thickness for Si wafers of different doping species and densities has been measured from 30 to 1000 Å for dry O2 oxidation at 900 °C. The transition from the linear to parabolic oxide growth rate occurs near 300 Å with measured rate constants of 6 Å/min and 2500 Å2/min, respectively. Carbon in graphitic form was found on the surface of the wafers prior to oxidation. This changed to a carbide‐type form after oxidation and remained at the Si‐SiO2 interface.This publication has 20 references indexed in Scilit:
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