Ga0.47 In0.53 As—The material for high-speed devices
- 1 September 1984
- journal article
- Published by Springer Nature in Pramana
- Vol. 23 (3) , 411-421
- https://doi.org/10.1007/bf02846585
Abstract
No abstract availableKeywords
This publication has 79 references indexed in Scilit:
- Estimation of alloy scattering potential in ternaries from the study of two-dimensional electron transportApplied Physics Letters, 1983
- Modification of the virtual-crystal approximation for ternary III-V compoundsPhysical Review B, 1983
- Evidence for alloy scattering from pressure-induced changes of electron mobility in In
1−
x
Ga
x
As
y
P
1−
y
Electronics Letters, 1980
- The Influence of Alloy Scattering on Electrons and Holes in In1-xGaxAsyP1-yJapanese Journal of Applied Physics, 1980
- Oscillatory magneto-transmission of In1−xGaxAsyP1−yalloysJournal of Magnetism and Magnetic Materials, 1979
- Characterization of the optical properties of LPE In Ga1−As P1− thin layers grown on InPJournal of Crystal Growth, 1978
- Liquid Phase Epitaxial Growth, Electron Mobility and Maximum Drift Velocity of In1-xGaxAs (x\cong0.5) for Microwave DevicesJapanese Journal of Applied Physics, 1977
- Growth and Characterization of InP-lnGaAsP Lattice-Matched HeterojunctionsJournal of the Electrochemical Society, 1973
- Electroreflectance measurements in mixed III–V alloysCanadian Journal of Physics, 1969
- Thermal, electrical and optical properties of (In,Ga)as alloysJournal of Physics and Chemistry of Solids, 1959