Lattice location of N atoms in heavily N-doped ZnSe studied with ion beam analysis and its implication on deep level defects
- 1 April 1994
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 138 (1-4) , 290-294
- https://doi.org/10.1016/0022-0248(94)90823-0
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Self-compensation in nitrogen-doped ZnSePhysica B: Condensed Matter, 1993
- Effect of N doping on the structural properties of ZnSe epitaxial layers grown by molecular beam epitaxyApplied Physics Letters, 1993
- Compensation processes in nitrogen doped ZnSeApplied Physics Letters, 1992
- Heavily doped p-ZnSe:N grown by molecular beam epitaxyApplied Physics Letters, 1991
- Acceptor compensation mechanism by midgap defects in nitrogen-doped ZnSe filmsApplied Physics Letters, 1991
- p-type ZnSe homoepitaxial layers grown by molecular beam epitaxy with nitrogen radical dopingJournal of Applied Physics, 1991
- Anomalous reduction of lattice parameter by residual impurity boron in undoped Czochralski-grown GaAsApplied Physics Letters, 1988
- Lattice Location by Channeling Angular Distributions: Bi Implanted in SiPhysical Review B, 1972