Ultrathin silicon oxynitride film formation by plasma immersion nitrogen implantation
- 8 February 1999
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 74 (6) , 806-808
- https://doi.org/10.1063/1.123374
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Effects of the surface deposition of nitrogen on the thermal oxidation of silicon in O2Journal of Applied Physics, 1998
- Surface nitridation of silicon dioxide with a high density nitrogen plasmaJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1997
- Reliability of gate oxide grown on nitrogen-implanted Si substratesApplied Physics Letters, 1996
- Plasma-Immersion Ion ImplantationMRS Bulletin, 1996
- Inherent possibilities and restrictions of plasma immersion ion implantation systemsJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1996
- Clarification of Nitridation Effect on Oxide Formation MethodsJapanese Journal of Applied Physics, 1996
- Formation of Ultrathin Nitrided SiO2 Oxides by Direct Nitrogen Implantation into SiliconJournal of the Electrochemical Society, 1995
- Growth mechanism of thin silicon oxide films on Si(100) studied by medium-energy ion scatteringPhysical Review B, 1995
- Mechanisms of Thermal Nitridation of SiliconJournal of the Electrochemical Society, 1995
- Three-dimensional distributions of ion range and damage including recoil transportNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1987