Efficient bottom-emitting VCSEL arrays for highCW optical output power
- 11 June 1998
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 34 (12) , 1227-1228
- https://doi.org/10.1049/el:19980842
Abstract
Two-dimensional vertical-cavity surface-emitting laser diode (VCSEL) arrays emitting at 980 nm wavelength have been designed and fabricated for high CW optical output powers. 3 × 3 oxide confined bottom emitting VCSEL arrays with maximum output powers up to 650 mW and 25% conversion efficiency at 270 mW under CW operation are described.Keywords
This publication has 5 references indexed in Scilit:
- High-performance oxide-confined GaAs VCSELsIEEE Journal of Selected Topics in Quantum Electronics, 1997
- 57% wallplug efficiency oxide-confined 850 nm wavelengthGaAs VCSELsElectronics Letters, 1997
- High power top-surface emitting oxide confined vertical-cavitylaser diodesElectronics Letters, 1996
- Selectively oxidised vertical cavity surface emittinglaserswith 50% power conversion efficiencyElectronics Letters, 1995
- High-power vertical-cavity surface-emitting lasersElectronics Letters, 1993