Intersubband resonance excitation in microstructured MOS systems
- 3 April 1986
- journal article
- Published by Elsevier in Surface Science
- Vol. 170 (1-2) , 346-352
- https://doi.org/10.1016/0039-6028(86)90985-4
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- Two-dimensional plasmons in homogeneous and laterally microstructured space charge layersSurface Science, 1986
- Parallel excitation of hole and electron intersubband resonances in space-charge layers on siliconPhysical Review B, 1984
- Minigaps in the Plasmon Dispersion of a Two-Dimensional Electron Gas with Spatially Modulated Charge DensityPhysical Review Letters, 1984
- Subband resonance of electrons on Si(110)Physical Review B, 1984
- Localization and Electron-Electron Interaction Effects in Submicron-Width Inversion LayersPhysical Review Letters, 1982
- One-Dimensional Localization and Interaction Effects in Narrow (0.1-μm) Silicon Inversion LayersPhysical Review Letters, 1982
- Electronic properties of two-dimensional systemsReviews of Modern Physics, 1982
- Conductance in Restricted-Dimensionality Accumulation LayersPhysical Review Letters, 1982
- Frequency domain studies of intersubband optical transitions in Si inversion layersSolid State Communications, 1979
- Electronic levels in surface space charge layers on Si(100)Physical Review B, 1976