Ultrasonic spectroscopy in p-type silicon
- 1 January 1979
- journal article
- Published by EDP Sciences in Journal de Physique Lettres
- Vol. 40 (3) , 53-55
- https://doi.org/10.1051/jphyslet:0197900400305300
Abstract
From ultrasonic resonant absorption over a wide frequency range we have determined the distribution of the energy splittings of the acceptor ground state in very pure Si(B) crystals. The measured distributions with maxima of the order of 10 μeV fit well to the expected electric field distribution from the ≃ 1012 cm-3 residual donors. The critical intensity for saturating the resonance attenuation has been measured in crystals of various acceptor concentrations and as a function of temperature. Although the average distance of acceptor atoms is much greater than the Bohr-radius of the bound defect-electrons, relaxation times are found to be shortened by the acceptor-acceptor interactionKeywords
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