Ultrasonic attenuation due to the neutral acceptor Mn in GaAs
- 1 January 1976
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 18 (4) , 449-452
- https://doi.org/10.1016/0038-1098(76)90311-2
Abstract
No abstract availableKeywords
Funding Information
- Deutsche Forschungsgemeinschaft (SFB 67)
This publication has 10 references indexed in Scilit:
- EPR on manganese-doped GaAs epitaxial layersPhysica Status Solidi (a), 1975
- Strongly quenched deformation potentials of the Mn acceptor in GaAsPhysical Review B, 1974
- Impurity Conduction and the Metal-Nonmetal Transition in Manganese-Doped Gallium ArsenidePhysical Review B, 1973
- Interaction of Acoustic Waves with Acceptor Holes in Silicon: The Influence of Internal StressPhysical Review B, 1973
- Uniaxial stress dependence of ultrasonic attenuation in p-type siliconSolid State Communications, 1972
- On the ultrasonic attenuation in glasses at low temperaturesThe European Physical Journal A, 1972
- Rayleigh Scattering Studies of NCl at High PressuresPhysical Review Letters, 1972
- Paramagnetic relaxation of shallow acceptor states in semiconductorsJournal of Physics and Chemistry of Solids, 1965
- Electron Paramagnetic Resonance of Manganese in Gallium ArsenidePhysical Review B, 1962
- Electron spin resonance on Mn in GaAsPhysics Letters, 1962