Structural and Optical Properties of AlGaN/GaN Quantum-Well Structures Grown by MOCVD on Sapphire
- 1 January 1996
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Fundamental optical transitions in GaNApplied Physics Letters, 1996
- Properties of a Si doped GaN/AlGaN single quantum wellApplied Physics Letters, 1995
- Growth and Properties of III-V Nitride Films, Quantum Well Structures and Integrated Heterostructure DevicesMRS Proceedings, 1995
- Photoluminescence characteristics of AlGaN-GaN-AlGaN quantum wellsApplied Physics Letters, 1990