Technological Prospects for Germanium Silicide Epitaxy
- 1 January 1988
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 24 references indexed in Scilit:
- Silicon-Based Semiconductor HeterostructuresPublished by Taylor & Francis ,2018
- Determination of the critical layer thickness of Si1−xGex/Si heterostructures by direct observation of misfit dislocationsApplied Physics Letters, 1988
- Relaxation of strained-layer semiconductor structures via plastic flowApplied Physics Letters, 1987
- Band alignments of coherently strained GexSi1−x/Si heterostructures on 〈001〉 GeySi1−y substratesApplied Physics Letters, 1986
- Waveguide infrared photodetectors on a silicon chipIEEE Electron Device Letters, 1986
- Indirect band gap of coherently strained bulk alloys on 〈001〉 silicon substratesPhysical Review B, 1985
- Strain-Induced Two-Dimensional Electron Gas in Selectively DopedSuperlatticesPhysical Review Letters, 1985
- Pseudomorphic growth of GexSi1−x on silicon by molecular beam epitaxyApplied Physics Letters, 1984
- Defects associated with the accommodation of misfit between crystalsJournal of Vacuum Science and Technology, 1975
- One-dimensional dislocations. I. Static theoryProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1949