Influence of Reactive Gas Pressure on the Properties of Thin Film Ta2O5

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Abstract
An intensive investigation concerning the specific properties of DC reactively sputtered thin film Ta2O5 and the influence of the fabrication condition were carried out. The examined properties involved the electronic properties (dielectric constant, dielectric loss, leakage current and breakdown voltage), the optical property (refractive index) and the structural properties (crystalline structure and surface texture). Both the electronic and optical properties were found to depend on the gas pressure in the discharge chamber in which the film were grown; meanwhile the gas pressure caused no effects on the crystalline and surface texture of the film. The films which were formed under a lower sputtering gas pressure tended to occupy a higher dielectric constant and refractive index, and to occupy a lower dielectric loss and leakage current. In the electron diffraction analysis the deposited film showed an inherently amorphous crystalline structure. Thermal stability studies have shown that the annealing of Ta2O5 films could transform their amorphous structure to a polycrystalline type without perturbing the film surface texture. The critical temperature for such a transformation appears at 700°C.

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