A polarization-independent silicon light intensity modulator for 1.32 mu m fiber optics

1 April 1990

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters

Vol. 2 (4) , 262-264
https://doi.org/10.1109/68.53256

Abstract

The authors have developed an integrated silicon light intensity modulator based on polarization-independent free-carrier optical phase modulation and mode filtering in fibers. A novel push-pull complementary diode pair are used for a twofold increase in modulation depth over a single diode device. Operation is demonstrated at a wavelength of 1.32 mu m.

Keywords

This publication has 5 references indexed in Scilit:

Optical detection of charge modulation in silicon integrated circuits using a multimode laser-diode probe
IEEE Electron Device Letters, 1987
Electrooptical effects in silicon
IEEE Journal of Quantum Electronics, 1987
Loss Analysis of Single-Mode Fiber Splices
Bell System Technical Journal, 1977
Efficient 100 Mb/s driver for electroluminescent diodes
International Journal of Electronics, 1973
The silicon PIN diode as a microwave radar protector at megawatt levels
IEEE Transactions on Electron Devices, 1964