Growth of CdTe epitaxial films on p-InSb(111) by temperature gradient vapor transport deposition

Publisher Website
Google Scholar
Abstract
The growth of high quality CdTe epitaxial films on p‐InSb(111) by a simple method of temperature gradient vapor transport deposition was carried out to investigate the possibility of the existence of a two‐dimensional electron gas with high mobility at CdTe/InSb heterointerfaces. From the x‐ray diffraction analysis, the grown layer was found to be a CdTe epitaxial film. Photoluminescence measurements at 15 K showed that a CdTe film grown on InSb(111) in the temperature range between 180 and 280 °C appeared to have an optimum crystal perfection at a substrate temperature of about 245 °C. These results also indicated that the CdTe films grown above 245 °C contained a significant problem due to interdiffusion from the InSb substrates during the growth.