Electrical properties of a CdTe/InSb hetero metal-insulator-semiconductor structure
- 18 April 1988
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 52 (16) , 1306-1307
- https://doi.org/10.1063/1.99145
Abstract
Electrical properties of a metal/CdTe/InSb metal‐insulator‐semiconductor structure have been investigated by capacitance‐voltage and conductance‐voltage measurements for the first time at 77 K. Interfaces of both p‐ and n‐type InSb substrates can be controlled from accumulation states to inversion states. Distribution of interface state density evaluated by the Terman method is U shaped with the minimum value of 1012 cm−2 eV−1.Keywords
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