Heteroepitaxial growth of CdTe on InSb by metalorganic chemical vapor deposition
- 9 November 1987
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 51 (19) , 1515-1517
- https://doi.org/10.1063/1.98620
Abstract
Heteroepitaxial growth of CdTe on an InSb (111)B substrate has been investigated using the metalorganic chemical vapor deposition method under a total vapor pressure of about 1 Pa. By cracking diethyltellurium thermally at 670 °C, CdTe films were deposited in a wide substrate temperature range from 120 to 450 °C. Single‐crystal films grown at 250 °C showed a good surface morphology.Keywords
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