Low-temperature organometallic vapor phase epitaxial growth of CdTe using a new organotellurium source
- 8 June 1987
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 50 (23) , 1681-1683
- https://doi.org/10.1063/1.97766
Abstract
The growth of CdTe by organometallic vapor phase epitaxy has been accomplished at 250 °C, using a new tellurium source, dimethylditelluride. The compound decomposes at a much lower temperature than the corresponding monotelluride, apparently by reacting with a cadmium‐containing species to eliminate one tellurium atom. As a result, the temperature necessary for deposition of CdTe has been lowered from the range of 400 °C, thus making completely thermally driven chemical vapor deposition of II‐VI compounds possible at much lower temperatures.Keywords
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