Photoelectrical and electrical properties of polycrystalline CdxHg1−x Te layers on GaAs substrates

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Abstract
Temperature dependences of electrical conductivity, concentration, and mobility of electrons, as well as photoconductivity spectra and conductivity-illumination characteristics of Cd0.8Hg0.2Te polycrystalline layers grown on GaAs substrates are studied. The features of charge transport and photoconductivity of CdxHg1−xTe/CdTe/GaAs structures are discussed. It is established that a high photoconductivity at a temperature of 300 K and a jump in conductivity-illumination characteristics at high levels of excitation are caused by the influence of electrically active grain boundaries, which produce the potential barriers for the drift and recombination of charge carriers. It is shown within the framework of the semiconductor barrier model with a random potential relief pattern that, for high levels of excitation by the radiation pulses of ruby or neodymium lasers, the height of potential barriers at the grain boundaries lowers due to screening by nonequilibrium carriers.

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