Chapter 8 Doping Effects in a-Si: H
- 1 January 1984
- book chapter
- Published by Elsevier
- Vol. 21, 257-307
- https://doi.org/10.1016/s0080-8784(08)63072-0
Abstract
No abstract availableKeywords
This publication has 100 references indexed in Scilit:
- Electronic properties of doped glow-discharge amorphous germaniumSolar Energy Materials, 1982
- PAS study of gap-state profiles of P-doped and undoped a-Si:HSolar Energy Materials, 1982
- Dependence of hydrogen evolution from a-Si: H on boron doping and substrate potentialSolar Energy Materials, 1982
- Modifications in optoelectronic behavior of plasma-deposited amorphous semiconductor alloys via impurity incorporationJournal of Non-Crystalline Solids, 1980
- Density of states in amorphous silicon determined from transport experimentsJournal of Non-Crystalline Solids, 1980
- Post-hydrogenation of CVD deposited a-Si filmsJournal of Non-Crystalline Solids, 1980
- Glow discharge optical spectroscopy measurement of dopant concentrations in a-Si:HJournal of Non-Crystalline Solids, 1980
- Influence of alkaali and halogen implantation on electrical properties of amorphous siliconJournal of Non-Crystalline Solids, 1980
- Hydrogen content, electrical properties and stability of glow discharge amorphous siliconSolar Energy Materials, 1979
- Photo and dark conductivity of doped amorphous siliconPhysica Status Solidi (b), 1977