Dependence of hydrogen evolution from a-Si: H on boron doping and substrate potential
- 1 November 1982
- journal article
- Published by Elsevier in Solar Energy Materials
- Vol. 8 (1-3) , 205-214
- https://doi.org/10.1016/0165-1633(82)90063-6
Abstract
No abstract availableKeywords
This publication has 21 references indexed in Scilit:
- Proton spin-lattice relaxation in plasma-deposited amorphous silicon-hydrogen filmsPhysical Review B, 1981
- Proton nmr studies of annealed plasma-deposited amorphous Si:H filmsSolid State Communications, 1981
- Recent developments in amorphous silicon solar cellsSolar Energy Materials, 1980
- Hydrogen-Associated Disorder Modes in Amorphous Si:H FilmsPhysical Review Letters, 1980
- Proton Magnetic Resonance Spectra of Plasma-Deposited Amorphous Si: H FilmsPhysical Review Letters, 1980
- Electrical and optical properties of amorphous Si:F:H alloysPhilosophical Magazine Part B, 1979
- Hydrogen bonding in silicon-hydrogen alloysPhilosophical Magazine Part B, 1978
- Infrared and Raman spectra of the silicon-hydrogen bonds in amorphous silicon prepared by glow discharge and sputteringPhysical Review B, 1977
- Electronic properties of substitutionally doped amorphous Si and GePhilosophical Magazine, 1976
- Electron Spin Resonance in Amorphous Silicon, Germanium, and Silicon CarbidePhysical Review Letters, 1969