Tunneling in field induced diode in indium antimonide
- 30 September 1976
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 19 (9) , 789-794
- https://doi.org/10.1016/0038-1101(76)90157-x
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Field-induced tunnel diode in indium antimonideJournal of Applied Physics, 1975
- Inversion-Asymmetry and Warping-Induced Interband Magneto-Optical Transitions in InSbPhysical Review B, 1969
- MOST's at cryogenic temperaturesSolid-State Electronics, 1968
- A high field triodeSolid-State Electronics, 1965
- Band Structure of HgSe and HgSe–HgTe AlloysJournal of Applied Physics, 1961
- Band structure of indium antimonideJournal of Physics and Chemistry of Solids, 1957