An investigation into the behaviour of trapping centres in microplasmas
- 1 January 1975
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 18 (1) , 13-23
- https://doi.org/10.1016/0038-1101(75)90067-2
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Field dependence of the capture and re-emission of charge carriers by shallow levels in germanium and siliconSolid-State Electronics, 1973
- Turn-on Mechanism of a MicroplasmaJapanese Journal of Applied Physics, 1968
- A report on the delay time of an avalanche discharge in siliconBritish Journal of Applied Physics, 1967
- Variation of Junction Breakdown Voltage by Charge TrappingPhysical Review B, 1965
- Theory of Microplasma Instability in SiliconJournal of Applied Physics, 1961
- Effect of Dislocations on Breakdown in Silicon p-n JunctionsJournal of Applied Physics, 1958
- Energy Levels in Electron-Bombarded SiliconPhysical Review B, 1957
- Avalanche Breakdown in SiliconPhysical Review B, 1954
- Statistics of the Recombinations of Holes and ElectronsPhysical Review B, 1952