A thermodynamic approach for the vapour phase epitaxial growth of GaxIn1−xAs from A Ga-In-H-Cl-As system
- 31 January 1990
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 99 (1-4) , 333-340
- https://doi.org/10.1016/0022-0248(90)90539-w
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Equilibrium analysis of the deposition of InxGa1−xAs by the VPE-hydride technique; Method to predict the composition of the ternaryJournal of Crystal Growth, 1987
- Heterogeneous nucleation and growth of polycrystalline siliconBulletin of Materials Science, 1985
- Epitaxial Growth Rate of GaAs : Chloride Transport ProcessJournal of the Electrochemical Society, 1985
- A simple method for calculation of the composition of VPE grown GaxIn1−xAs layers as a function of growth parametersJournal of Crystal Growth, 1984
- Modeling of chemical vapor depositionJournal of Crystal Growth, 1982
- Variation of interfacial tension with the number of molecules in the critical two-dimensional nucleusJournal of Physics D: Applied Physics, 1982
- A Simple Analysis of Vapor Phase Growth; Citing an Instance of Ga x In1 − x AsJournal of the Electrochemical Society, 1979
- Kinetic aspects in the vapour phase epitaxy of III–V compoundsJournal of Crystal Growth, 1975
- Thermodynamic Calculation for the Vapor Growth of InxGa1-xAs: The In-Ga-As-Cl-H SystemJapanese Journal of Applied Physics, 1972
- Initial Stage of Epitaxial Growth in Thin FilmsCrystal Research and Technology, 1969