The effect of dislocations on the formation of radiation defects in silicon
- 16 May 1982
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 71 (1) , 99-108
- https://doi.org/10.1002/pssa.2210710112
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- EPR of a carbon-oxygen-divacancy complex in irradiated siliconPhysica Status Solidi (a), 1977
- Carbon interstitial in electron-irradiated siliconSolid State Communications, 1977
- Effects of dislocations on the energy loss of charged particles in hyperchannelingPhysics Letters A, 1976
- Photo-EPR experiments on defects in irradiated siliconRadiation Effects, 1976
- Effect of 60Co γ Rays on High-Resistivity p-Type SiJournal of Applied Physics, 1966