A 500-MHz GaAs charge-coupled device

15 January 1980

journal article
conference paper
Published by AIP Publishing in Applied Physics Letters

Vol. 36 (2) , 151-153
https://doi.org/10.1063/1.91411

Abstract

The higher electron mobility in GaAs relative to silicon makes it possible to design an ultra-high-Speed charge-coupled device. A buried-channel Schottky barrier gate GaAs charge-coupled device (CCD) is described which has been operated at up to 500 MHz clock frequency. The transit-time-limited upper clock frequency in this device is predicted to exceed 5 GHz.

Keywords

SEMICONDUCTOR DEVICES
GALLIUM ARSENIDES
COUPLING
MHZ RANGE
ELECTRON MOBILITY
SILICON
COMPARATIVE EVALUATIONS
DATA
SCHOTTKY BARRIER DIODES
FORECASTING
GHZ RANGE
CHARGE CARRIERS

This publication has 1 reference indexed in Scilit:

GaAs charge-coupled devices
Applied Physics Letters, 1978