LOW-TEMPERATURE EPITAXIAL GROWTH OF PN JUNCTIONS BY UHV SUBLIMATION
- 15 October 1968
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 13 (8) , 270-272
- https://doi.org/10.1063/1.1652605
Abstract
The feasibility of growing epitaxial pn junctions at temperatures as low as 550°C by sublimation in UHV has been demonstrated. The junctions, which show abrupt impurity profiles, have excellent and predictable rectification characteristics. Transmission electron microscope studies suggest good crystallographic perfection. The relatively high minority carrier lifetime of 6 μsec which was measured indicates a low concentration of lifetime killing impurities at the junction region.Keywords
This publication has 5 references indexed in Scilit:
- A NEW MECHANISM FOR STACKING FAULT GENERATION IN EPITAXIAL GROWTH OF SILICON IN ULTRA-HIGH VACUUMApplied Physics Letters, 1967
- A LEED STUDY OF THE HOMOEPITAXIAL GROWTH OF THICK SILICON FILMSApplied Physics Letters, 1967
- Epitaxial Growth of Silicon and Germanium (II)Physica Status Solidi (b), 1966
- Epitaxial Growth of Silicon by Vacuum SublimationJournal of the Electrochemical Society, 1964
- On the Transient Behavior of Semiconductor RectifiersJournal of Applied Physics, 1955