Electron Quantum Interference and1fNoise in Bismuth

The $\frac{1}{f}$ resistance noise of thin Bi films of lateral dimensions 1-10 μm increases at low temperatures approximately as $T^{-1\mathrm{}}$, and the noise at 1 K is larger than at room temperature. The noise magnitude is reduced by a factor of 2 above a temperature-dependent characteristic magnetic field. These phenomena demonstrate that below liquid-nitrogen temperature the $\frac{1}{f}$ noise in a weakly disordered metal arises from defect-mediated quantum interference of conduction electrons.