Energetics and effects of planar defects in CdTe
- 15 October 2001
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 90 (8) , 3952-3955
- https://doi.org/10.1063/1.1405138
Abstract
The formation energies of planar defects such as lamellar twins and intrinsic and extrinsic stacking faults in CdTe are calculated using first-principles total-energy calculations. We find that the formation energies, 16 erg / cm 2 for lamellar twins and 34 and 31 erg/cm 2 for intrinsic and extrinsic stacking faults, are very small. This explains why high densities of planar defects are always present in the fast-grown CdTe thin films. The effects of the planar defects on the formations of important point defects in p-type CdTe are also investigated. We find that the planar defects have negligible effects on Cd vacancies and substitutional Cu, whereas they lower the formation energy of Te antisites by about 0.1 eV compared to the perfect regions.This publication has 21 references indexed in Scilit:
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