A model for oxygen precipitation in silicon including bulk stacking fault growth

Publisher Website
Google Scholar
Abstract
This paper describes a model that simulates the precipitation kinetics of oxygen and the evolution of the precipitate density in annealed Czochralski‐silicon wafers. A discrete rate equation representation combined with Fokker‐Planck equations are used to treat precipitation of oxygen and simultaneous formation of bulk stacking faults. This approach allows one to describe both statistical clustering during nucleation and diffusional transport during growth. The model considers explicitly influences of self interstitials and stress on precipitation of oxygen and thus is able to accurately predict the experimental observations published previously. In particular, we compare simulation results of precipitated oxygen concentration in 2‐step, 3‐step, complementary metal oxide semiconductor type multi‐step, and rapid thermal anneals with experimental results taken from the literature and discuss them.