Embryo formation during crystal growth
- 31 December 1984
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 70 (1-2) , 319-323
- https://doi.org/10.1016/0022-0248(84)90281-1
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- Influence of carbon and oxygen on donor formation at 700 °C in Czochralski-grown siliconJournal of Applied Physics, 1982
- Nucleation temperature of large oxide precipitates in as-grown Czochralski silicon crystalJournal of Crystal Growth, 1982
- Thermally induced microdefects in Czochralski-grown silicon crystalsJournal of Crystal Growth, 1982
- Thermally Induced Microdefects in Czochralski-Grown Silicon: Nucleation and Growth BehaviorJapanese Journal of Applied Physics, 1982
- A Study on Thermally Induced Microdefects in Czochralski-Grown Silicon Crystals : Dependence on Annealing Temperature and Starting MaterialsJapanese Journal of Applied Physics, 1980