Si/SiGe p-Channel MOSFETs
- 1 January 1991
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Oxidation of Strained Si-Ge Layers Grown by MBEMRS Proceedings, 1987
- Low-temperature silicon epitaxy by ultrahigh vacuum/chemical vapor depositionApplied Physics Letters, 1986