A structure modeling of metal-silicide layers by using axial and planar channeling techniques
- 1 March 1978
- journal article
- Published by Elsevier in Nuclear Instruments and Methods
- Vol. 149 (1-3) , 417-420
- https://doi.org/10.1016/0029-554x(78)90898-4
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Separate estimate of crystalline orientations and scattering centers in polycrystals by backscattering techniqueJournal of Applied Physics, 1976
- Epitaxial Growth of Nickel Silicide NiSi2on SiliconJapanese Journal of Applied Physics, 1974
- Characterization of polycrystalline layers by channelling measurementsThin Solid Films, 1973
- Ion channeling studies of the crystalline perfection of epitaxial layersJournal of Applied Physics, 1973
- Channeling of MeV Projectiles in Tungsten and SiliconPhysical Review B, 1968