Carrier temperature and spectral holeburning dynamics in InGaAsP quantum well laser amplifiers
- 10 January 1994
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 64 (2) , 143-145
- https://doi.org/10.1063/1.111545
Abstract
An experimental and theoretical study of ultrafast gain dynamics in InGaAsP multiple quantum well laser amplifiers is presented. A transition from pump-induced heating of the carriers to pump-induced cooling is observed by change of the pump-probe wavelength. The experimental results are in good agreement with a theoretical model including the effects of carrier temperature dynamics, spectral holeburning, and two-photon absorption.Keywords
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