Realization and performance of quarter micron feature size InGaAs/InP MSM photodetector
- 9 December 2002
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Long-wavelength (1.0–1.6 μm)In0.52Al0.48As/ In0.53(GaxAl1−x)0.47As/In0.53Ga0.47As metal-semiconductor-metal photodetectorApplied Physics Letters, 1990
- Very high speed GaInAs metal-semiconductor-metal photodiode incorporating an AlInAs/GaInAs graded superlatticeApplied Physics Letters, 1989
- On the response behavior of fast photoconductive optical planar and coaxial semiconductor detectorsIEEE Transactions on Electron Devices, 1982