High-resolution transmission electron microscopy of silicon re-growth at controlled elevated temperatures
- 1 August 1986
- journal article
- letter
- Published by Springer Nature in Nature
- Vol. 322 (6079) , 531-533
- https://doi.org/10.1038/322531a0
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Lattice images of defect-free silicon on sapphire prepared by ion implantationApplied Physics Letters, 1985
- Imaging of atomic clouds outside the surfaces of gold crystals by electron microscopyNature, 1985
- Direct Observation of Defect Motion in Silicon By High-Resolution Transmission Electron MicroscopyProceedings, annual meeting, Electron Microscopy Society of America, 1985
- The preparation of cross‐section specimens for transmission electron microscopyJournal of Electron Microscopy Technique, 1984
- Dynamic observation of defect annealing in CdTe at lattice resolutionNature, 1982
- Dynamic Observation of Atomic-Level Events in Cadmium Telluride by High Resolution TemMRS Proceedings, 1982
- Atomic motion on the surface of a cadmium telluride single crystalNature, 1981
- Direct Observations of the Arrangement of Atoms around Stacking Faults and Twins in Gold Crystals and the Movement of Atoms Accompanying Their Formation and DisappearanceJapanese Journal of Applied Physics, 1980