Atomic and cluster ion emission from silicon in secondary-ion mass spectrometry
- 1 April 1981
- journal article
- Published by Elsevier in International Journal of Mass Spectrometry and Ion Physics
- Vol. 38 (1) , 21-33
- https://doi.org/10.1016/0020-7381(81)80016-2
Abstract
No abstract availableThis publication has 29 references indexed in Scilit:
- On the mechanism of cluster emission in sputteringPhysics Letters A, 1979
- The use of secondary ion mass spectrometry for studies of oxygen adsorption and oxidationSurface Science, 1977
- Empirical formula for the calculation of secondary ion yields from oxidized metal surfaces and metal oxidesSurface Science, 1977
- STRUCTURE ÉLECTRONIQUE DE PETITS AGRÉGATS OBTENUS PAR ÉMISSION IONIQUE SECONDAIRELe Journal de Physique Colloques, 1975
- On the energy distribution of sputtered clustersRadiation Effects, 1975
- On the energy distribution of sputtered dimersRadiation Effects, 1974
- Spectral Interferences in Secondary Ion Mass SpectrometryApplied Spectroscopy, 1973
- New developments in the surface analysis of solidsApplied Physics B Laser and Optics, 1973
- Angular dependence of clusters sputtered from a tungsten single crystal surfaceRadiation Effects, 1973
- Alternations in the secondary emission of molecular ions from noble metalsJournal of Physics and Chemistry of Solids, 1971